EDN

Normally-off and Current Collapse Free GaN Transistor

Current trends of power supply design, both for industrial and commercial applications focus on higher efficiency and increased power density that are beyond the capability of MOS technology. This ...
Business Wire

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...
EDN

Simulating a GaN transistor

New power applications are perfect for GaN transistors. They are incredibly efficient, operate at very high speeds, and have compact dimensions. Any electricity project can be built with them with ...
Electronic Design

350-V GaN Transistor: 10X Smaller than Comparable Silicon and Lower Cost

Wide-bandgap (WBG) power electronics devices reduce component size, increase efficiency, and improve performance for hybrid and all-electric vehicles. In particular, gallium nitride’s (GaN) ...
Electronic Design

In Pursuit of Robust, Higher-Speed Power Designs with GaN

How GaN provides superior power designs compared to silicon. Why LLC resonant topologies are best. Traditional power transistors have long contributed to power losses (aka lower efficiency) in ...
Semiconductor Engineering

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
Design News

GaN Transistor Unlocks the Power of 5G

While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...
Semiconductor Engineering

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...
SpaceNews

Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
EurekAlert!

GaN transistors and high-power amplifiers for millimeter wave satellite communications

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...